Articles in 2011

The ability to communicate research results to a non-specialist audience in a clear and concise manner is a skill that should not be overlooked.

Slow-light techniques originally conceived for buffering high-speed digital optical signals now look set to play an important role in providing broadband phase and true time delays for microwave signals.

Researchers have developed flexible thin-film OLEDs that exhibit high efficiencies at green wavelengths without the use of a high-refractive-index substrate.

The ability to fabricate an array of GaN light emitters on an amorphous glass substrate could lead to significant improvements in the scalability and cost of blue and white LED technology.

The ease at which group III–V semiconductors can now be integrated with silicon suggests that the need for a pure silicon laser is rapidly fading.

The successful growth of GaN-based LEDs on amorphous glass avoids the size and cost limitations of a sapphire substrate, says Jun Hee Choi from the Samsung Advanced Institute of Technology in South Korea.

Researchers demonstrate a scheme that combines the high spatial resolution of full-field transmission X-ray microscopy (TXM) with high-spectral-resolution near-edge X-ray absorption fine structure (NEXAFS). The idea could lead to a wide range of new material studies that combine high-resolution spectroscopic techniques with nanoscale tomographic imaging.

Scientists present the first experimental observations of bright polariton solitons in a strongly coupled semiconductor microcavity. The findings should pave the way to the investigation of a variety of fundamental phenomena, such as interactions between solitons with different spins and the formation of soliton molecules.

Scientists report the fabrication of a nonreciprocal optical resonator with a small length footprint of 290 µm on a silicon-on-insulator substrate. The device achieves unidirectional optical transmission with an isolation ratio of up to 19.5 dB near the telecommunications wavelength of 1,550 nm in a homogeneous external magnetic field.