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Semiconductors are materials that have a small electronic bandgap. This bandgap prevents current from flowing at absolute zero, but thermally excited charge carriers can begin to flow at higher temperatures. Semiconductors, notably silicon, are at the heart of the modern microelectronics industry, and also have applications in light sources and detectors.
The band topology of twisted 2D systems is a key factor behind their fascinating physics. Here, the authors demonstrate the role of polarization in driving the band topology evolution in twisted transition metal dichalcogenide homobilayers.
The authors report the sweet-spot operation of germanium hole spin qubits, exploring the optimization of the external magnetic field orientation, the g-tensor and its electric tunability, and hyperfine interactions.
Superionic fluoride dielectrics with a low ion migration barrier are capable of excellent capacitive coupling and are highly compatible with scalable device manufacturing processes for integrated electronics.
A molecular design strategy for reducing the vibration-induced non-radiative losses in emissive organic semiconductors is realized by decoupling excitons from high-frequency vibrations.
Lightweight and flexible thin crystalline silicon solar cells have huge market potential but remain relatively unexplored. Here, authors present a thin silicon structure with reinforced ring to prepare free-standing 4.7-μm 4-inch silicon wafers, achieving efficiency of 20.33% for 28-μm solar cells.
Silicon spin qubits are promising for the realisation of scalable quantum computing platforms but their coherence times in natural silicon are limited by the non-zero nuclear spin of the 29Si isotope. Here, enriched 28 Si down to 2.3 ppm residual 29Si is obtained by focused ion beam implantation.
Two-dimensional crystals have revolutionized fundamental research across a staggering range of disciplines. We take stock of the progress gained after twenty years of work.
The integration of high-performance n-type and p-type two-dimensional transistors — which can be fabricated on 300 mm wafers using a die-by-die transfer process — is an important step in the lab-to-fab transition of two-dimensional semiconductors.